Simulation study of the electron mobility in few-layer MoS2 metal¬タモinsulator-semiconductor field-effect transistors

This work analyzes the electron mobility in few-layer MoS2-based metal–insulator-semiconductor field-effect transistors. To do it, the Poisson and Schrödinger equations are self consistently solved using the effective mass approximation to model the six equivalent K valleys characteristic of multilayer MoS2. The mobility is calculated using the Kubo-Greenwood approach under the momentum relaxation time approximation. The influence of the semiconductor thickness, the temperature and the bias conditions are analyzed. A good agreement with the experimental results presented in the literature is achieved, with electron mobilities ranging between 140 and 200 cm2 V 1 s 1 at T 1⁄4 300 K. 2015 Elsevier Ltd. All rights reserved.